C1969 Datasheet, Transistor, eleflow

C1969 Features

• Transistor
• High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
• Emitter ballasted construction for reliability and performance.
• Manufactured incorporating recy

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C1969

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eleflow

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📄 Datasheet

Description:

Silicon npn epitaxial planar type transistor. The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for

C1969 Application

• Applications Features
• High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
• Emitter ballasted construction for reliabilit

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C1969

eleflow

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