C1969 silicon NPN epitaxial planar type transistor

C1969 Description

.
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio appl.

C1969 Features

* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
* Emitter ballasted construction for reliability and performance.
* Manufactured incorporating recyclable RoHS compliant materials.
* Ability to periodically withstand infinite VSWR load when operated @ Vcc

📥 Download Datasheet

C1969 Datasheet Preview — Preview of C1969 PDF

Datasheet Details

Part number: C1969
Manufacturer: eleflow
File Size: 491.86 KB
Datasheet: C1969-eleflow.pdf
Description: silicon NPN epitaxial planar type transistor

📁 Related Datasheet

C1964 - RF POWER TRANSISTOR (Mitsubishi)
C1965 - NPN Power Transistor (Mitsubishi)
C1968 - 2SC1968 (Mitsubishi)
C1968A - 2SC1968A (Mitsubishi)
C1904 - 2SC1904 (SavantIC)
C1906 - 2SC1906 (Hitachi Semiconductor)
C1907 - 2SC1907 (Hitachi Semiconductor)
C1921 - 2SC1921 (Hitachi Semiconductor)

📌 All Tags

silicon NPN epitaxial planar type transistor eleflow

eleflow C1969-like datasheet