C1969 Datasheet - eleflow

C1969 silicon NPN epitaxial planar type transistor

C1969 Features

* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz

* Emitter ballasted construction for reliability and performance.

* Manufactured incorporating recyclable RoHS compliant materials.

* Ability to periodically withstand infinite VSWR load when operated @ Vcc

Datasheet Details

C1969

eleflow

491.86 KB

Silicon npn epitaxial planar type transistor.

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