EM6112K800V Datasheet - eorex

EM6112K800V 512K x 8 LP SRAM

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designe.

EM6112K800V Features

* z Fast access time: 45/55/70ns z Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) z Single 2.7V ~ 3.6V power supply z All inputs and outputs TTL compatible z Fully static operation z Tri-state output z Data retention voltage: 1.5V (MIN.) z Pa

EM6112K800V-eorex.pdf