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EM6112K800V Datasheet - eorex

512K x 8 LP SRAM

EM6112K800V Features

* z Fast access time: 45/55/70ns z Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2ยตA (TYP.) z Single 2.7V ~ 3.6V power supply z All inputs and outputs TTL compatible z Fully static operation z Tri-state output z Data retention voltage: 1.5V (MIN.) z Pa

EM6112K800V General Description

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designe.

EM6112K800V Datasheet (308.09 KB)

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Preview of EM6112K800V PDF

Datasheet Details

Part number:

EM6112K800V

Manufacturer:

eorex

File Size:

308.09 KB

Description:

512k x 8 lp sram.

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EM6112K800V 512K SRAM eorex

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