CSD16407Q5 Datasheet - Texas Instruments

CSD16407Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain-to0source voltage Qg Gate charge, total (4.5 V) Qgd Gate charge, gate-to-drain RDS(on) Drain-to-source on-resistance VG.

CSD16407Q5 Features

* 1

* 2 Ultralow Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* SON 5-mm × 6-mm Plastic Package APPLICATIONS

* Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems

* Optimized for Synchronous FET

CSD16407Q5-etcTI.pdf