CSD16414Q5 Datasheet - Texas Instruments

CSD16414Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 16.6 nC Qgd Gate Charge Gate to Drain 4.4 nC RDS(on) Drain to S.

CSD16414Q5 Features

* 1

* 2 Ultra Low Qg and Qgd

* Low Thermal Resistance

* Avalanche Rated

* Pb Free Terminal Plating

* RoHS Compliant

* Halogen Free

* SON 5mm × 6mm Plastic Package APPLICATIONS

* Point-of-Load Synchronous Buck Converter for Applications in

CSD16414Q5-etcTI.pdf