CSD19535KTT Datasheet - Texas Instruments

CSD19535KTT 100V N-Channel Power MOSFET

This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. . Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Dra.

CSD19535KTT Features

* 1 Ultra-Low Qg and Qgd

* Low-Thermal Resistance

* Avalanche Rated

* Lead-Free Terminal Plating

* RoHS Compliant

* Halogen Free

* D2PAK Plastic Package 2 Applications

* Hot Swap

* Motor Control

* Secondary Side Synchrono

CSD19535KTT Datasheet (372.43 KB)