LMG3422R030 - GaN FET

Texas Instruments

LMG3422R030 Datasheet Preview — Preview of LMG3422R030 PDF

Datasheet Details

Part number	LMG3422R030
Manufacturer	Texas Instruments ↗
File Size	2.73 MB
Description	GaN FET
Datasheet	LMG3422R030-etcTI.pdf

LMG3422R030 Product details

Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Features

Qualified for JEDEC JEP180 for hard-switching topologies.
600V GaN-on-Si FET with integrated gate driver.
Integrated high precision gate bias voltage.
200V/ns FET hold-off.
2.2MHz switching frequency.
20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation.
Operates from 7.5V to 18V supply.
Robust protection.
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100n.

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Published: Mar 28, 2024 |