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LMG3426R030 Datasheet - Texas Instruments

GaN FET

LMG3426R030 Features

* Qualified for JEDEC JEP180 for hard-switching topologies

* 600V GaN-on-Si FET with integrated gate driver

* Integrated high precision gate bias voltage

* 200V/ns FET hold-off

* 2.2MHz switching frequency

* 20V/ns to 150V/ns slew rate for optimization

LMG3426R030 General Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision g.

LMG3426R030 Datasheet (2.73 MB)

Preview of LMG3426R030 PDF

Datasheet Details

Part number:

LMG3426R030

Manufacturer:

Texas Instruments ↗

File Size:

2.73 MB

Description:

Gan fet.
LMG3422R030, LMG3426R030 SNOSDA7E SEPTEMBER 2020 REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Prote.

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Stock and price

Distributor
Infineon Technologies AG
IRFS4410ZTRLPBF
566 In Stock
Qty : 25 units
Unit Price : $1.19

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LMG3426R030 GaN FET Texas Instruments

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