Description
LMG3422R030, LMG3426R030 SNOSDA7E * SEPTEMBER 2020 * REVISED FEBRUARY 2024 LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Prote.
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels.
Features
* Qualified for JEDEC JEP180 for hard-switching topologies
* 600V GaN-on-Si FET with integrated gate driver
* Integrated high precision gate bias voltage
* 200V/ns FET hold-off
* 2.2MHz switching frequency
* 20V/ns to 150V/ns slew rate for optimization
Applications
* Switch-mode power converters
* Merchant network and server PSU
* Merchant telecom rectifiers
* Solar inverters and industrial motor drives
* Uninterruptible power supplies
RDRV IN
VDD
Slew Rate
LDO5V TEMP
Direct-Drive SOURCE
DRAIN GaN
LDO, BB
VNEG
OCP
