Description
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
Features
- 650V GaN-on-Si FET with integrated gate driver.
- Integrated high precision gate bias voltage.
- 200V/ns FET hold-off.
- 2MHz switching frequency.
- 20V/ns to 150V/ns slew rate for optimization of
switching performance and EMI mitigation.
- Operates from 7.5V to 18V supply.
- Robust protection.
- Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100ns response.
- Withstands 720V surge while hard-switching.
LMG3522R030-etcTI.pdf
