LMG3526R030 Datasheet - Texas Instruments

GaN FET

LMG3526R030 Features

* 650V GaN-on-Si FET with integrated gate driver

* Integrated high precision gate bias voltage

* 200V/ns FET hold-off

* 2MHz switching frequency

* 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation

* Operates from

LMG3526R030 General Description

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision g.

LMG3526R030 Datasheet (3.11 MB)