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LMG3526R030, LMG3522R030 GaN FET

LMG3526R030 Description

LMG3522R030, LMG3526R030 SNOSDF3A * NOVEMBER 2022 * REVISED MAY 2024 LMG352xR030 650V 30mΩ GaN FET With Integrated Driver, Protection,.
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels.

LMG3526R030 Features

* 650V GaN-on-Si FET with integrated gate driver
* Integrated high precision gate bias voltage
* 200V/ns FET hold-off
* 2MHz switching frequency
* 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
* Operates from

LMG3526R030 Applications

* Switch-mode power converters
* Merchant network and server PSU
* Merchant telecom rectifiers
* Solar inverters and industrial motor drives
* Uninterruptible power supplies RDRV IN VDD Slew Rate LDO5V TEMP FAULT OC or ZVD Direct-Drive SOURCE DRAIN GaN L

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: LMG3526R030, LMG3522R030. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
LMG3526R030, LMG3522R030
Manufacturer
Texas Instruments ↗
File Size
3.11 MB
Datasheet
LMG3522R030-etcTI.pdf
Description
GaN FET
Note
This datasheet PDF includes multiple part numbers: LMG3526R030, LMG3522R030.
Please refer to the document for exact specifications by model.

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