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TMS465169 DYNAMIC RANDOM-ACCESS MEMORIES

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Description

D Organization ...4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) D Performance Ranges: ACCESS ACCESS ACCESS EDO TIME TIME.
The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits.

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* of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessari

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TMS465169 DYNAMIC RANDOM-ACCESS MEMORIES Texas Instruments
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