TMS465169P, TMS465169 Datasheet - Texas Instruments

TMS465169P DYNAMIC RANDOM-ACCESS MEMORIES

The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits. The TMS465169P is similar DRAM but includes a long refresh period and a self-refresh option. Both employ state-of-the-art technology for high performance, reliability.

D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) D Performance Ranges: ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC tCAC MAX MAX tAA MAX tHPC MIN ’46x169/P-50 50 ns 13 ns 25 ns 20 ns ’46x169/P-60 60 ns 15 ns 30 ns 25 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D Long Refresh Period and Self-Refresh Option ( TMS46x169P) D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 50-Lead 400-M.

TMS465169-etcTI.pdf