BAS321J

High-voltage switching diode

nexperia

* High switching speed: trr ≤ 50 ns

* Low leakage current: IR ≤ 100 nA

* High reverse voltage VR ≤ 200 V

* Low capacitance: Cd ≤ 2 pF

* Very small SMD plastic package

* AEC-Q101 qualified 3. Applications

* High-speed switching

* Genera

BAS321J

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High-voltage switching diode.

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BAS321J High-voltage switching diode nexperia

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