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BAW56M-Q High-speed switching diode

BAW56M-Q Description

BAW56M-Q High-speed switching diode 17 March 2025 Product data sheet 1.General .
High-speed switching diode, encapsulated in a ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.

BAW56M-Q Features

* High switching speed: trr ≤ 4 ns
* Low capacitance: Cd ≤ 2 pF
* Low leakage current
* Reverse voltage: VR ≤ 90 V
* Ultra small SMD plastic packages

BAW56M-Q Applications

* 3. Applications
* High-speed switching
* General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA;

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