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BSS84AKQB P-channel MOSFET

BSS84AKQB Description

BSS84AKQB 50 V, P-channel Trench MOSFET 13 July 2021 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package.

BSS84AKQB Features

* Logic-level compatible
* Side wettable flanks for optical solder inspection
* Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
* AEC-Q101 qual

BSS84AKQB Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -10 V;

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