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BUK7K3R7-40N Dual N-channel 40V MOSFET

BUK7K3R7-40N Description

BUK7K3R7-40N Dual N-channel 40 V, 3.7 mOhm standard level MOSFET in LFPAK56D 3 March 2025 Product data sheet 1.General .
Automotive qualified Dual N-channel standard level MOSFET using the latest Trench 15 low ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, provid.

BUK7K3R7-40N Features

* Dual MOSFET
* two silicon dies in one LFPAK56D package for significant space saving
* Fully automotive qualified to AEC-Q101:
* 175 °C rating suitable for thermally demanding environments
* Trench 15 e-TBO technology:
* Merging benefits of superjunct

BUK7K3R7-40N Applications

* 12 V automotive systems
* Motor, lighting, and solenoid control
* Transmission control
* Ultra high-performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Limiting values FET1 and FET2 VDS drain-source v

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