NX1029X Datasheet - nexperia

NX1029X, N/P-channel MOSFET

NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 28 December 2022 Product data sheet 1.General .
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic p.

Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology

Applications

* Level shifter
* Power supply converter
* Loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel) VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS =

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