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NX138BKS dual N-channel MOSFET

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Description

NX138BKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1.General .
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench.

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Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Per transistor VDS drain-source voltage Tj = 25 °C - - 60 VGS gate-source voltage

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dual N-channel MOSFET nexperia
nexperia NX138BKS-like datasheet