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NX138BKH - N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3.

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Datasheet Details

Part number NX138BKH
Manufacturer nexperia
File Size 281.23 KB
Description N-channel Trench MOSFET
Datasheet download datasheet NX138BKH Datasheet
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Full PDF Text Transcription

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NX138BKH 60 V, N-channel Trench MOSFET 6 February 2023 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.
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