NX138BKW
NX138BKW is N-channel MOSFET manufactured by Nexperia.
description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 2 k V HBM
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20
- 20 V
ID drain current
VGS = 10 V; Tamb = 25 °C
[1]
- - 210 m A
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 200 m A; Tj = 25 °C resistance
- 2.1 3.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 G gate 2 S source 3 D drain
Simplified outline
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