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PHB18NQ10T N-Channel MOSFET

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Description

PHB18NQ10T N-channel TrenchMOS standard level FET Rev.02 * 17 December 2010 Product data sheet 1.Product profile 1.1 General .
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

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Features

* Higher operating power due to low thermal resistance
* Low conduction losses due to low on-state resistance

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