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PHB10N40 Datasheet - NXP

PHB10N40 - PowerMOS transistor

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.

Intended for use in Switched Mode Power S

PHB10N40_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHB10N40

Manufacturer:

NXP ↗

File Size:

69.82 KB

Description:

Powermos transistor.

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