* Low conduction losses due to low on-state resistance
* Simple gate drive required due to low gate charge
* Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
* DC-to-DC convertors
* Lithium-ion battery applications
* Notebook
PHKD13N03LT Datasheet (776.66 KB)
PHKD13N03LT
776.66 KB
Dual n-channel trenchmos logic level fet.
PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 5 27 December 2011 Product data sheet 1. Product profile 1.1 General descriptio.
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