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PMPB06R7VP 12V P-channel Trench MOSFET

PMPB06R7VP Description

202D0FM-N6 PMPB06R7VP 12 V, P-channel Trench MOSFET 21 February 2025 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic packag.

PMPB06R7VP Features

* Low threshold voltage
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm

PMPB06R7VP Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portable devices
* Computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source volt

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