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PMPB06R3XN - 30V N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm.
  • Exposed drain pad for excellent thermal conduction 3.

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Datasheet Details

Part number PMPB06R3XN
Manufacturer Nexperia
File Size 328.72 KB
Description 30V N-channel Trench MOSFET
Datasheet download datasheet PMPB06R3XN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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202D0FM-N6 PMPB06R3XN 30 V, N-channel Trench MOSFET 13 February 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm • Exposed drain pad for excellent thermal conduction 3. Applications • Battery management • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.