PMPB06R3XN Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMPB06R3XN Key Features
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm
- Exposed drain pad for excellent thermal conduction