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PSMN038-100YL N-channel MOSFET

PSMN038-100YL Description

PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1.General .
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package.

PSMN038-100YL Features

* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive
* LFPAK56 package is footprint compatible with other Power-SO8 types

PSMN038-100YL Applications

* DC-to-DC converters
* Load switch
* TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation T

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