* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Appli
PSMN3R2-30YLC Datasheet (907.25 KB)
PSMN3R2-30YLC
907.25 KB
N-channel mosfet.
PSMN3R2-30YLC
N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 01
* 2 May 2011
Product data sheet
1. Produ.
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