PSMN3R2-40YLD Datasheet - nexperia

PSMN3R2-40YLD N-channel MOSFET

Simplified outline 1 S source mb 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol D G mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name PSMN3R2-40YLD LFPAK56; Power-SO8.

PSMN3R2-40YLD 2 January 2019 Objective data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 4.5 V.

PSMN3R2-40YLD-nexperia.pdf