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PSMN4R0-60YS N-channel MOSFET

PSMN4R0-60YS Description

PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET 14 May 2015 Product data sheet 1.General .
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C.

PSMN4R0-60YS Features

* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency in switching power converters
* Improved mechanical and thermal characteristics

PSMN4R0-60YS Applications

* DC-to-DC converters
* Lithium-ion battery protection
* Load switching
* Motor control
* Server power supplies
* Telecom power 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C;

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