UFB15C12E1BC3N SiC Cascode JFET

qorvo

Description

DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Full-Bridge Module, 1200 V, 70 mohm Rev.D, January 2025 UFB15C12E1BC3N .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number: UFB15C12E1BC3N
Manufacturer: qorvo
File Size: 1.49 MB
Datasheet: UFB15C12E1BC3N-qorvo.pdf
Description: SiC Cascode JFET

Features

* w On-resistance: RDS(on) = 70mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 140nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UFB15C12E1BC3N Rev. D, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Po

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UFB15C12E1BC3N SiC Cascode JFET qorvo

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