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UFB15C12E1BC3N Datasheet - qorvo

SiC Cascode JFET

UFB15C12E1BC3N Features

* w On-resistance: RDS(on) = 70mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 140nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2

UFB15C12E1BC3N General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, S.

UFB15C12E1BC3N Datasheet (1.49 MB)

Preview of UFB15C12E1BC3N PDF

Datasheet Details

Part number:

UFB15C12E1BC3N

Manufacturer:

qorvo

File Size:

1.49 MB

Description:

Sic cascode jfet.

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UFB15C12E1BC3N SiC Cascode JFET qorvo

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