UFB25SC12E1BC3N - SiC Cascode JFET

qorvo

UFB25SC12E1BC3N Datasheet Preview — Preview of UFB25SC12E1BC3N PDF

Datasheet Details

Part number	UFB25SC12E1BC3N
Manufacturer	qorvo
File Size	1.57 MB
Description	SiC Cascode JFET
Datasheet	UFB25SC12E1BC3N-qorvo.pdf

UFB25SC12E1BC3N Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

w On-resistance: RDS(on) = 35mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 244nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 42.5nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical.

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Published: Apr 14, 2025 |