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UFB25SC12E1BC3N Datasheet - qorvo

SiC Cascode JFET

UFB25SC12E1BC3N Features

* w On-resistance: RDS(on) = 35mW (typ) w Operating temperature: 150°C (max) w Excellent reverse recovery: Qrr = 244nC w Low body diode voltage: VFSD= 1.4V w Low gate charge: QG = 42.5nC w Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class

UFB25SC12E1BC3N General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, S.

UFB25SC12E1BC3N Datasheet (1.57 MB)

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Datasheet Details

Part number:

UFB25SC12E1BC3N

Manufacturer:

qorvo

File Size:

1.57 MB

Description:

Sic cascode jfet.
DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Full-Bridge Module, 1200 V, 35 mohm Rev. D, January 2025 UFB25SC12E1BC3N Descriptio.

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UFB25SC12E1BC3N SiC Cascode JFET qorvo

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