QA3111N6N - 30V Asymmetric Dual N-Channel Power MOSFET

uPI Semiconductor

QA3111N6N Datasheet Preview — Preview of QA3111N6N PDF

Datasheet Details

Part number	QA3111N6N
Manufacturer	uPI Semiconductor
File Size	516.40 KB
Description	30V Asymmetric Dual N-Channel Power MOSFET
Datasheet	QA3111N6N-uPISemiconductor.pdf

QA3111N6N Product details

Description

The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Excellent CdV/dt effect decline.
Green Device Available Product Summary VDS Die1 30V RDS(ON) max (VGS=10V) 5.6mΩ ID (TC=25 °C) 59A Die2 30V 1.3mΩ 135A.

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Published: Sep 2, 2024 |