QA3111N6N Datasheet - uPI Semiconductor

QA3111N6N, 30V Asymmetric Dual N-Channel Power MOSFET

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General .
The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate.

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Datasheet Details

Part number:

QA3111N6N

Manufacturer:

uPI Semiconductor

File Size:

516.40 KB

Description:

30V Asymmetric Dual N-Channel Power MOSFET

Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Excellent CdV/dt effect decline

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