6 views

QA3111N6N Datasheet - uPI Semiconductor

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET

The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QA3111N6N meets RoHS and Green Product requiremen.

QA3111N6N Features

* Advanced high cell density Trench technology

* Super Low Gate Charge

* Excellent CdV/dt effect decline

* Green Device Available Product Summary VDS Die1 30V RDS(ON) max (VGS=10V) 5.6mΩ ID (TC=25 °C) 59A Die2 30V 1.3mΩ 135A Applications

* High Frequen

QA3111N6N Datasheet (516.40 KB)