QA3111N6N Datasheet, Mosfet, uPI Semiconductor

QA3111N6N Features

  • Mosfet
  • Advanced high cell density Trench technology
  • Super Low Gate Charge
  • Excellent CdV/dt effect decline
  • Green Device Available Product Summary VDS D

PDF File Details

Part number:

QA3111N6N

Manufacturer:

uPI Semiconductor

File Size:

516.40kb

Download:

📄 Datasheet

Description:

30v asymmetric dual n-channel power mosfet. The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET which utilizes extremely high cell density to provide lo

Datasheet Preview: QA3111N6N 📥 Download PDF (516.40kb)
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QA3111N6N Application

  • Applications The QA3111N6N meets RoHS and Green Product requirements while supporting full function reliability. Features
  • Advanced high

TAGS

QA3111N6N
30V
Asymmetric
Dual
N-Channel
Power
MOSFET
uPI Semiconductor

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