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TPM2025 - Automotive Dual-Channel Ultra-Highspeed GaN Predriver

General Description

The TPM2025 / TPM2025Q family are low-side dualchannel ultra-highspeed gate drivers for GaN and logic-level MOSFETs.

It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design.

Key Features

  • AEC-Q100 Grade-1 Qualified (TPM2025Q Only).
  • Dual Independent Channels.
  • 5-V Single Supply with Optimized Output Damping for Gan Reliability.
  • 7-A Peak Source And 5-A Sink-Drive Current.
  • 0.69-ns Minimum Input Pulse Width (Typical).
  • Low Propagation Delay (2-ns Typical).
  • Optimized Pinout for nanosecond-pulse-width.
  • Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical).

📥 Download Datasheet

Datasheet Details

Part number TPM2025
Manufacturer 3PEAK
File Size 868.76 KB
Description Automotive Dual-Channel Ultra-Highspeed GaN Predriver
Datasheet download datasheet TPM2025 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPM2025 / TPM2025Q Automotive Dual-Channel Ultra-Highspeed GaN Predriver Features ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Channels ⚫ 5-V Single Supply with Optimized Output Damping for Gan Reliability ⚫ 7-A Peak Source And 5-A Sink-Drive Current ⚫ 0.69-ns Minimum Input Pulse Width (Typical) ⚫ Low Propagation Delay (2-ns Typical) ⚫ Optimized Pinout for nanosecond-pulse-width ⚫ Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical) ⚫ <0.61-ns Typical Delay Matching Between Two Channels ⚫ ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.