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MC33GD3000

Manufacturer: NXP Semiconductors

MC33GD3000 datasheet by NXP Semiconductors.

MC33GD3000 datasheet preview

MC33GD3000 Datasheet Details

Part number MC33GD3000
Datasheet MC33GD3000-NXP.pdf
File Size 921.75 KB
Manufacturer NXP Semiconductors
Description Three phase field effect transistor predriver
MC33GD3000 page 2 MC33GD3000 page 3

MC33GD3000 Overview

The 33GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications. It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified. The IC contains three high-side FET predrivers and three low-side FET predrivers.

MC33GD3000 Key Features

  • Extended operating range from 6.0 V to 60 V covers 12 V and 48 V systems
  • Gate drive capability of 1.0 A to 2.5 A
  • Fully specified from 8.0 V to 40 V, covers 12 and 24 V automotive systems
  • Device protection against reverse charge-injection from CGD and CGS of external FETs
  • Dead time is programmable via the SPI port
  • Simultaneous output capability enabled via safe SPI mand
  • AEC-Q100 grade 1 qualified

MC33GD3000 Applications

  • Extended operating range from 6.0 V to 60 V covers 12 V and 48 V systems
  • Gate drive capability of 1.0 A to 2.5 A
  • Fully specified from 8.0 V to 40 V, covers 12 and 24 V automotive systems
  • Device protection against reverse charge-injection from CGD and CGS of external FETs
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MC33GD3000 Distributor

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