MC33GD3000 Datasheet Three phase field effect transistor predriver

Manufacturer: NXP Semiconductors

Overview: MC33GD3000 Three phase field effect transistor predriver Rev. 10.

Datasheet Details

Part number	MC33GD3000
Manufacturer	NXP Semiconductors
File Size	921.75 KB
Description	Three phase field effect transistor predriver
Download	MC33GD3000 Download (PDF)

The 33GD3000 is a field effect transistor (FET) predriver designed for three phase motor control and similar applications.

It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.

The IC contains three high-side FET predrivers and three low-side FET predrivers.

Extended operating range from 6.0 V to 60 V covers 12 V and 48 V systems.
Gate drive capability of 1.0 A to 2.5 A.
Fully specified from 8.0 V to 40 V, covers 12 and 24 V automotive systems.
Device protection against reverse charge-injection from CGD and CGS of external FETs.
Dead time is programmable via the SPI port.
Simultaneous output capability enabled via safe SPI command.
AEC-Q100 grade 1 qualified 3.

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