ABB 5SDD0120C0200
Rectifier Diode
VRRM IFAVM IFRMS IFSM VF0 rF = = = = = = 200 V 11000 A 17300 A 85000 A 0.75 V 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06
● Optimized for high current rectifiers
● Very low on-state voltage
● Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 kN 40 kN Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 0120C0200 On-state IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive...
● Optimized for high current rectifiers
● Very low on-state voltage
● Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 kN 40 kN Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 0120C0200 On-state IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive...