5SDD0120C0200 Datasheet | ABB

.. VRRM IFAVM IFRMS IFSM VF0 r F = = = = = = 200 V 11000 A 17300 A 85000 A 0.75 V 0.020 mΩ Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 July 06 - Optimized for high current rectifiers - Very low on-state voltage - Very low thermal resistance Blocking VRRM VRSM IRRM Repetitive peak reverse voltage Maximum peak reverse voltage Repetitive peak reverse current 200 V 300 V ≤ 50 m A Half sine wave, t P = 10 ms, f = 50 Hz Half sine wave, t P = 10 ms Tj = 170 °C VR = VRRM Mechanical FM a Mounting force min. max. Acceleration: Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 0.22 kg 4 mm 4 mm 35 k N 40 k N Fig. 1 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. .. 5SDD 0120C0200 On-state IFAVM IFRMS IFSM ∫I2dt Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current 11000 A 17300 A 85000 A 92500 A Max. surge current integral tp = tp = 10 ms Before surge 8.3 ms Tj = 170 °C 10 ms After surge: Half sine wave, Tc = 85 °C 36100 k A2s tp = 35700 k A2s tp = 8.3 ms VR ≈ 0V 8000 A Tj = 170 °C VF max VF0 r F Maximum on-state voltage Threshold voltage Slope resistance ≤ 0.92 V 0.75 V 0.020 mΩ IF = Approximation for Tj = 170 °C IF = 8 - 18 k A Thermal characteristics Tj Tstg Rth(j-c) Operating junction temperature range Storage temperature range Thermal resistance junction to case -40...170 °C -40…170 °C ≤ ≤ ≤ Rth(c-h) Thermal resistance case to heatsink ≤ ≤ 12 K/k W Anode side cooled 12 K/k W Cathode side cooled 6 K/k W Double side cooled 6 K/k W Single side cooled 3 K/k W Double side cooled FM = 35…40 k N Zth JC [K/k W] 8 Double sided cooling Fm = 35...40 k N Z th ( j - c )(t) = i 1 3.37 0.095 Ri (K/k W) 5SDD 0120C0200 ∑ R i...