5SHY55L4500 Datasheet | ABB

VDRM ITGQM ITSM V(T0) r T VDC-link = = = = = = 4500 5500 33×103 1.3 0.26 2800 V A A V mΩ V Asymmetric Integrated Gatemutated Thyristor 5SHY 55L4500 PRELIMINARY Doc. No. 5SYA1243-01 Aug 07 - High snubberless turn-off rating - Optimized for medium frequency (<1 k Hz) - High .. electromagnetic immunity - Simple control interface with status feedback - AC or DC supply voltage - Option for series connection (contact factory) Blocking Maximum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized, Note 1 Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage Characteristic values min typ max 4500 2800 17 Unit V V V Unit m A Ambient cosmic radiation at sea level in open air. Gate Unit energized VRRM min typ Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized max 50 Mechanical data (see Fig. 11, 12) 1) Maximum rated values Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm min 36 min 25.3 33 10 typ 40 typ 85 max 44 max 25.8 2.9 Unit k N Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height 439 40 173 mm mm mm Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SHY 55L4500 GCT Data On-state (see Fig.1)3, 4, 5, 6, 14, 15) Maximum rated values Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral .. Max. peak Symbol Conditions IT(AV)M Half sine wave, TC = 85 °C, Double side cooled IT(RMS) ITSM I2t ITSM I2t ITSM I2t LD di T/dtcr Only relevant for applications...