5SMX12L2510 Overview
VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 5SYA 1622-03 Sep 05 Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature.