5SMX12L2511 Overview
VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 5SYA1640-00 Mar 07 Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature.