ABB 5SNA1800E170100
IGBT Module
VCE = IC = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100
● Low-loss, rugged SPT chip-set
● Smooth switching SPT chip-set for good EMC
● Industry standard package
● High power density
● AlSiC base-plate for high power cycling capability
● AlN substrate for low thermal resistance Doc. No. 5SYA 1554-03 Nov. 04 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) Case temperature Tc Storage temperature Tstg M1 Base-heatsink, M6 screws Mounting torqu...
● Low-loss, rugged SPT chip-set
● Smooth switching SPT chip-set for good EMC
● Industry standard package
● High power density
● AlSiC base-plate for high power cycling capability
● AlN substrate for low thermal resistance Doc. No. 5SYA 1554-03 Nov. 04 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) Case temperature Tc Storage temperature Tstg M1 Base-heatsink, M6 screws Mounting torqu...