Datasheet Summary
VCE = IC =
3300 V 800 A
ABB HiPakTM
IGBT Module
5SNE 0800E330100
PRELIMINARY
- Low-loss, rugged SPT chip-set
- Smooth switching SPT chip-set for good EMC
- Industry standard package
- High power density
- AlSiC base-plate for high power cycling capability
- AlN substrate for low thermal resistance
Doc. No. 5SYA1562-01 July 07
Maximum rated values 1)
Parameter
Symbol Conditions min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF Either diode
Peak forward current...