5STP24H2800 Datasheet | ABB

.. VDSM ITAVM ITRMS ITSM VT0 r T - - - - - = = = = = = 2800 V 2625 A 4120 A 43000 A 0.85 V 0.160 mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA1047-02 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Part Number VDRM VRSM1 IDRM IRRM d V/dtcrit VRRM 5STP 24H2800 5STP 24H2600 5STP 24H2200 Conditions 2800 V 3000 V 2600 V 2800 V ≤ 300 m A ≤ 300 m A 1000 V/µs 2200 V 2400 V f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDRM VRRM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 0.9 kg 36 mm 15 mm 50 k N 45 k N 60 k N ABB Semiconductors AG reserves the right to change specifications without notice. .. 5STP 24H2800 On-state ITAVM ITRMS ITSM It Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 2625 A 4120 A 43000 A 46000 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 9245 k A s tp = 8781 k A s tp = VT VT0 r T IH IL On-state voltage Threshold voltage Slope resistance Holding current 1.35 V 0.85 V 0.160 mΩ 25-75 m A 15-60 m A IT = IT = 1500 - 4500 A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Latching current 150- m A 600 50-200 m A Switching di/dtcrit Critical rate of rise of on-state current 150 A/µs 300 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 60 sec. f = 50Hz VD = 0.4⋅VDRM ITRM = 3000 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td tq Qrr Delay time Turn-off time ≤ ≤ min max 3.0 µs 400 µs VD ≤ 0.67⋅VDRM ITRM = 3000 A, Tj = 125°C dv D/dt = 20V/µs VR > 200 V, di T/dt = -20 A/µs Recovery...