5STP45Q2800
5STP45Q2800 is Phase Control Thyristor manufactured by ABB.
VDSM ITAVM ITRMS ITSM VT0 r T
= = = = = =
2800 V 5490 A 8625 A 75000 A 0.86 V 0.070 mΩ
Doc. No. 5SYA1050-01 Sep.00
Phase Control Thyristor
5STP 45Q2800
..
- Patented free-floating silicon technology
- Low on-state and switching losses
- Designed for traction, energy and industrial applications
- Optimum power handling capability
- Interdigitated amplifying gate.
Blocking
Part Number VDRM VRSM1 IDRM IRRM d V/dtcrit VRRM 5STP 45Q2800 2800 V 3000 V 5STP 45Q2600 2600 V 2800 V ≤ 400 m A ≤ 400 m A 1000 V/µs 5STP 45Q2200 2200 V 2400 V Conditions f = 50 Hz, tp = 10ms tp = 5 ms, single pulse VDRM VRRM @ Exp. to 0.67x VDRM Tj = 125°C
Mechanical data
FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s 2.1 kg 36 mm 15 mm
90 k N 81 k N 108 k N
100 m/s2
ABB Semiconductors AG reserves the right to change specifications without notice.
5STP 45Q2800
On-state
ITAVM ITRMS ITSM I2t Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 5490 A 8625 A 75000 A 79000 A 28125 k A2s 25900 k A2s VT
.. VT0
Half sine wave, TC = 70°C tp tp tp tp IT IT Tj Tj Tj Tj
= = = = = =
10 ms 8.3 ms 10 ms 8.3 ms 6000 A 3000
- 9000 A
Tj =
125°C
After surge: VD = VR = 0V
On-state voltage Threshold voltage Slope resistance Holding current
1.29 V 0.86 V 0.070 mΩ 40-100 m A 20-75 m A
Tj =
125°C r T IH
= 25°C = 125°C = 25°C = 125°C
Latching current
100-500 m A 150-350 m A
Switching di/dtcrit Critical rate of rise of on-state current ≤ ≤ 250 A/µs 500 A/µs Cont. 60 sec. VD = 0.4⋅VDRM VD ≤ 0.67⋅VDRM ITRM = IFG td tq Delay time Turn-off time 3.0 µs 400 µs IFG = = Tj = 125°C 3000 A f = 50 Hz 2.0 A tr = 0.5 µs 2.0 A tr = 0.5 µs 3000 A Tj = 125°C 200 V -5...
