Part ACE2600B
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Category Transistor
Manufacturer ACE Technology
Size 446.47 KB
ACE Technology

ACE2600B Overview

Description

The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.

Key Features

  • ID=6A (VGS=4.5V)
  • RDS(ON)<22mΩ (VGS=4.5V)
  • RDS(ON)<26mΩ (VGS=2.5V)
  • RDS(ON)<34mΩ (VGS=1.8V)
  • ESD Protected: 2000V