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ACE6428D Datasheet PDF

ACE Technology ACE6428D

The ACE6428D uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.
Part No. ACE6428D
Datasheet ACE6428D Download
Manufacturer
ACE Technology
Description N-Channel MOSFET
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ACE6428D datasheet page 1 preview

DESCRIPTION

FEATURES

● VDS(V)=30V
● ID=43A (VGS=10V)
● RDS(ON)<5.5mΩ (VGS=10V)
● RDS(ON)<9.5mΩ (VGS=4.5V)
● 100% Delta Vsd Tested
● 100% Rg Tested

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 100 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation A TA=25 OC TA=70 OC PDSM 2 W 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC VER 1.2 1 ACE6428D N-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics Parameter Symbol Typ Max Units Maxim
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