Datasheet Details
| Part number | ACE6428B |
|---|---|
| Manufacturer | ACE Technology |
| File Size | 702.09 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 ACE6428B Datasheet
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General Description
The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
This device is suitable for use as a high side switch in SMPS and general purpose applications.
Key Features
- VDS(V)=30V.
- ID=43A (VGS=10V).
- RDS(ON)＜10mΩ (VGS=10V).
- RDS(ON)＜14.5mΩ (VGS=4.5V).
- 100% Delta Vsd Tested.
- 100% Rg Tested Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25 OC TA=100 OC ID 43 27 A Drain Current (Pulse) C IDM 80 Drain Current (Continuous) TA=25 OC TA=70 OC IDSM 11 A 8 Power Dissipation B TA=25 OC TA=100 OC PD 30 W 12 Power Dissipation A.