Datasheet4U.com

ACE7402M Datasheet PDF

ACE Technology ACE7402M

The ACE7402M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.
Part No. ACE7402M
Datasheet ACE7402M Download
Manufacturer
ACE Technology
Description N-Channel 30-V MOSFET
Buy Stock & Price
ACE7402M datasheet page 1 preview

DESCRIPTION

FEATURES

● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed

APPLICATIONS

● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25 OC TA=70 OC Pulse Drain Current b Continuous Drain Current (Diode Continuous) a Power Dissipation a TA=25 OC TA=70 OC Operating Junction and Storage Temperature Range VDS 30 VGS ±20 20 ID 16 IDM 50 IS 6.4 5 PD 3.2 TJ,TSTG -55 to 150 V V A A W OC Parameter Maximum Junction-to-Ambient a t≦10sec Steady State Symbol RθJA Maximum 25 65 Units ℃/W ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type DFN5*6-8L ACE7402M N-Channel 30-V MOSFET Ordering information ACE7402M PN + H Halogen - free Pb - free PN : DFN5*6-8L VER 1.1 2 ACE7402M N-Channel 30-V MOSFET

ELECTRICAL CHARACTERISTICS

TA=25 OC u...
ACE7402M page 2 preview ACE7402M page 3 preview