ACE7402A Datasheet | ACE Technology

N-Channel Enhancement Mode MOSFET Description The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features - 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V - 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V - 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V - Super high density cell...