ACE Technology ACE7402A
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | ACE7402A |
|---|---|
| Datasheet | ACE7402A Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V● 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
● 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability Application
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter VER 1.1 1 ACE7402A N-Channel Enhancement Mode MOSFET
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 2.4 A 1.7 Pulsed Drain Current IDM 6 A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA 1.6 A 0.33 W 0.21 -55/150 OC -55/150 OC 105 OC/W Packaging Type SOT-323 3 12 SOT-323DESCRIPTION
1 Gate 2 Source 3 Drain Ordering information ACE7402A CM +...
