ACE7402A Overview
Description
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V
- 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
- 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
