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ACE7402A - N-Channel Enhancement Mode MOSFET

Description

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V.
  • 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V.
  • 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ACE7402A

Datasheet Details

Part number ACE7402A
Manufacturer ACE Technology
File Size 378.94 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE7402A Datasheet
Additional preview pages of the ACE7402A datasheet.

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Full PDF Text Transcription

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ACE7402A N-Channel Enhancement Mode MOSFET Description The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features • 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V • 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V • 20V/2.8A, RDS(ON) =95mΩ@VGS=1.
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