ACE7407A Datasheet | ACE Technology

P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features - -20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V - -20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V - -20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V -...