ACE7407A - P-Channel Enhancement Mode MOSFET

Product Overview

ACE Technology

Datasheet Details

Part number	ACE7407A
Manufacturer	ACE Technology
File Size	383.28 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	ACE7407A Datasheet
Additional preview pages of the ACE7407A datasheet.

Product details

Description

The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount packag

Features

-20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V.
-20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V.
-20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V.
-20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.

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Other Datasheets by ACE Technology

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Published: Jul 16, 2016 |