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ACE7400 - N-Channel Enhancement Mode MOSFET

Description

The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ACE7400

Datasheet Details

Part number ACE7400
Manufacturer ACE Technology
File Size 255.69 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE7400 Datasheet
Additional preview pages of the ACE7400 datasheet.

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Full PDF Text Transcription

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  www.DataSheet4U.com                                                                                        ACE7400                                               Technology Description N-Channel Enhancement Mode MOSFET The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.
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