ACE Technology ACE7400
The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | ACE7400 |
|---|---|
| Datasheet | ACE7400 Download |
| Manufacturer |  ACE Technology |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
N-Channel Enhancement Mode MOSFETFEATURES
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● 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
ABSOLUTE MAXIMUM RATINGS
Symbol Max Unit VDSS 30 V VGSS ±12 V TA=25℃ 2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.1 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.2 1 ACE7400 Technology Packaging Type SOT-23-3 3 N-Channel Enhancement Mode MOSFET Pin SymbolDESCRIPTION
1 G Gate 2 S S...
