ACE Technology ACE7409B
The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. The maximum current rating is package limited.| Part No. | ACE7409B |
|---|---|
| Datasheet | ACE7409B Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● VDS (V) = -30 V● ID =-30A (at VGS=-10V)
● < 14mΩ (VGS=-10V)
● < 20mΩ (VGS=-4.5V) Packaging Type Ordering information ACE7333M XX + H Halogen - free Pb - free NN : DFN3*3-8L
ABSOLUTE MAXIMUM RATINGS
@TA=25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)a TA=25 OC TA=70 OC Drain Current (Pulse)c Power Dissipation b TA=25 OC TA=70 OC Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ,TSTG Limit 30 ±20 30 22 82 25 16 -55 to 150 Units V V A W OC VER 1.1 1ELECTRICAL CHARACTERISTICS
@TA=25℃ unless otherwise noted ACE7409B P-Channel 30-V (D-S) MOSFET Parameter Symbol Conditions Static Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA Gate Threshold Voltage VGS(TH) VGS = VDS, IDS = -250μ A -1 -1.3 -3 V Gate Leakage Current Drain-Source On-state Resistance IGSS RDS(ON) VGS =±20V,VDS = 0V VGS=-10V,ID=-15A...
