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ACE7409B - P-Channel 30-V (D-S) MOSFET

Description

The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

This device is suitable for use as a high side switch in SMPS and general purpose applications.

Features

  • VDS (V) = -30 V.
  • ID =-30A (at VGS=-10V).
  • < 14mΩ (VGS=-10V).
  • < 20mΩ (VGS=-4.5V) Packaging Type Ordering information ACE7333M XX + H Halogen - free Pb - free NN : DFN3.
  • 3-8L Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)a TA=25 OC TA=70 OC Drain Current (Pulse)c Power Dissipation b TA=25 OC TA=70 OC Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ,TSTG.

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Datasheet preview – ACE7409B

Datasheet Details

Part number ACE7409B
Manufacturer ACE Technology
File Size 418.22 KB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ACE7409B Datasheet
Additional preview pages of the ACE7409B datasheet.

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Full PDF Text Transcription

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ACE7409B P-Channel 30-V (D-S) MOSFET Description The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features  VDS (V) = -30 V  ID =-30A (at VGS=-10V)  < 14mΩ (VGS=-10V)  < 20mΩ (VGS=-4.5V) Packaging Type Ordering information ACE7333M XX + H Halogen - free Pb - free NN : DFN3*3-8L Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)a TA=25 OC TA=70 OC Drain Current (Pulse)c Power Dissipation b TA=25 OC TA=70 OC Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ,TSTG Limit 30 ±20 30 22 82 25 16 -55 to 150 Units V V A W OC VER 1.
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