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ACE7401 - P-Channel Enhancement Mode MOSFET

Description

The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.5A, RDS(ON)=170mΩ@VGS=-2.5V -30V/-1.0A, RDS(ON)=240mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ACE7401

Datasheet Details

Part number ACE7401
Manufacturer ACE Technology
File Size 345.70 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE7401 Datasheet
Additional preview pages of the ACE7401 datasheet.

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Full PDF Text Transcription

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  www.DataSheet4U.com                                                                                        ACE7401                                               Technology Description P-Channel Enhancement Mode MOSFET The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • • -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.
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