ACE Technology ACE7401
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | ACE7401 |
|---|---|
| Datasheet | ACE7401 Download |
| Manufacturer |  ACE Technology |
| Description | P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
P-Channel Enhancement Mode MOSFETFEATURES
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● -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.5A, RDS(ON)=170mΩ@VGS=-2.5V -30V/-1.0A, RDS(ON)=240mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
ABSOLUTE MAXIMUM RATINGS
Symbol Max Unit VDSS -30 V VGSS ±12 V TA=25℃ -2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ -2.1 Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 105 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.2 1 ACE7401 Technology Packaging Type SOT-23-3 3 P-Channel Enhance...
